Reduced current leakage in rc esd clamps

ABSTRACT

Aspects of the invention provide an electrostatic discharge (ESD) protection device with reduced current leakage, and a related method. In one embodiment, an ESD protection device for an integrated circuit (IC) is provided. The ESD protection device includes: a resistor-capacitor (RC) timing circuit for selectively turning on the ESD protection device during an ESD event; a trigger circuit for receiving an output of the RC timing circuit and generating a trigger pulse for driving at least one of: a first ESD clamp and a second ESD clamp; and a selection circuit for selecting one of: the trigger circuit or a charge pump for controlling the second ESD clamp.

FIELD OF THE INVENTION

The disclosure relates generally to integrated circuit (IC) devices, andmore particularly, to an electrostatic discharge protection device withreduced current leakage, and a related method.

BACKGROUND

Electrostatic discharge (ESD) is the transfer of electrostatic chargebetween bodies at different electrostatic potentials (voltages), and candestroy and seriously impair IC devices. ESD protection devices areoften built into IC devices, in order to protect the various electroniccomponents with the IC device.

Standards for ESD protection devices are created by a standardizationorganization, such as the Joint Electron Devices Engineering Council(JEDEC). Some of these standards include the human-body model (HBM), themachine model (MM), and the charge-device model (CDM). Each modelcharacterizes the susceptibility of an electronic device (e.g., an IC)to damage from ESD.

The HBM simulates the ESD which may occur from the charge thataccumulates in a human body discharging through the electronic device.The MM simulates the ESD which may occur from the charge thataccumulates in a manufacturing machine (for packaging and probing)discharging through the electronic device. The goal of the CDM is tosimulate the discharge from the device through mechanical means whichcontact is made to a low impedance ground or a charge sink. For example,this may occur when the electronic device slides down a feeder tubeduring board assembly.

BRIEF SUMMARY

Aspects of the invention provide an ESD protection device with forreduced current leakage, and a related method. In one embodiment, an ESDprotection device for an IC is provided. The ESD protection deviceincludes: a resistor-capacitor (RC) timing circuit for selectivelyturning on the ESD protection device during an ESD event; a triggercircuit for receiving an output of the RC timing circuit and generatinga trigger pulse for driving at least one of: a first ESD clamp and asecond ESD clamp; and a selection circuit for selecting one of: thetrigger circuit or a charge pump for controlling the second ESD clamp.

A first aspect of the disclosure provides an electrostatic discharge(ESD) protection device for an integrated circuit (IC), comprising: aresistor-capacitor (RC) timing circuit for selectively turning on theESD protection device during an ESD event; a trigger circuit forreceiving an output of the RC timing circuit and generating a triggerpulse for driving at least one of: a first ESD clamp and a second ESDclamp; and a selection circuit for selecting one of: the trigger circuitor a charge pump for controlling the second ESD clamp.

A second aspect of the disclosure provides an integrated circuit (IC),comprising: a charge pump for supplying a negative bias voltage; and aplurality of electrostatic discharge (ESD) protection devices for theIC, each ESD protection device comprising: a resistor-capacitor (RC)timing circuit for selectively turning on the ESD protection deviceduring an ESD event; a trigger circuit for receiving an output of the RCtiming circuit and generating a trigger pulse for driving at least oneof: a first ESD clamp and a second ESD clamp; and a selection circuitfor selecting one of: the trigger circuit or the charge pump forcontrolling the second ESD clamp.

A third aspect of the disclosure provides a method of reducing currentleakage in an electrostatic discharge (ESD) protection device for anintegrated circuit (IC), the method comprising: providing a first ESDclamp directly connected to an RC timing circuit and a trigger circuitof the ESD protection device; providing a selection circuit thatconnects the trigger circuit to a second ESD clamp; turning off thesecond ESD clamp, in response to the selection circuit selecting acharge pump to control the second ESD clamp; and in response to an ESDevent, selecting, using the selection circuit, the trigger circuit tocontrol the second ESD clamp.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and advantages of the disclosurewill be better understood by reading the following more particulardescription of the disclosure in conjunction with the accompanyingdrawings.

FIG. 1 shows a schematic diagram of an electrostatic dischargeprotection device according to embodiments of the invention.

FIG. 2 shows a schematic diagram of an electrostatic dischargeprotection device according to embodiments of the invention.

FIG. 3 shows a schematic diagram of an integrated circuit including anelectrostatic discharge protection device according to embodiments ofthe invention.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the disclosure. The drawings are intended to depict only typicalembodiments of the disclosure, and therefore should not be considered aslimiting the scope of the disclosure. In the drawings, like numberingrepresents like elements.

DETAILED DESCRIPTION

The disclosure relates generally to integrated circuit (IC) devices, andmore particularly, to an electrostatic discharge protection device forreducing current leakage, and a related method.

BACKGROUND

Electrostatic discharge (ESD) is the transfer of electrostatic chargebetween bodies at different electrostatic potentials (voltages), and candestroy and seriously impair IC devices. ESD protection devices areoften built into IC devices, in order to protect the various electroniccomponents with the IC device.

Standards for ESD protection devices are created by a standardizationorganization, such as the Joint Electron Devices Engineering Council(JEDEC). Some of these standards include the human-body model (HBM), themachine model (MM), and the charge-device model (CDM). Each modelcharacterizes the susceptibility of an electronic device (e.g., an IC)to damage from ESD. The electronic device must be designed to complywith each of these standards.

The HBM simulates the ESD which may occur from the charge thataccumulates in a human body discharging through the electronic device.The MM simulates the ESD which may occur from the charge thataccumulates in a manufacturing machine (for packaging and probing)discharging through the electronic device. The goal of the CDM is tosimulate the discharge from the device through mechanical means whichcontact is made to a low impedance ground or a charge sink. For example,this may occur when the electronic device slides down a feeder tubeduring board assembly.

With the decrease in channel lengths in the latest technologies (forexample, the 32 nm silicon-on-insulator (SOI) technology or the 28 nmCMOS technology), high current leakage in the current ESD protectiondevices has been difficult to avoid. In particular, the CDM standard isharder to meet compared to the MM standard or the HBM standard due tothe higher current limits. To handle the higher current limits, andcomply with the CDM standard, additional clamps are required for the ESDprotection device. However, the additional clamps increase the size ofthe overall ESD protection device. Additionally, each clamp naturallyexhibits a current leakage, so the addition of numerous clamps increasesthe overall current leakage of the ESD protection device.

Aspects of the invention provide an ESD protection device for reducingcurrent leakage, and a related method. In one embodiment, an ESDprotection device for an IC is provided. The ESD protection deviceincludes: a resistor-capacitor (RC) timing circuit for selectivelyturning on the ESD protection device during an ESD event; a triggercircuit for receiving an output of the RC timing circuit and generatinga trigger pulse for driving at least one of: a first ESD clamp and asecond ESD clamp; and a selection circuit for selecting one of: thetrigger circuit or a charge pump for controlling the second ESD clamp.It is only under the condition of an ESD event that the second ESD clampis turned on. Therefore, the transistors within the second ESD clampwill not exhibit any current leakage, and the overall leakage of the ESDprotection device decreases.

Turning to FIG. 1, a schematic diagram of an electrostatic discharge(ESD) protection device 1 according to embodiments of the invention isshown. ESD protection device 1 includes a resistor-capacitor (RC) timingcircuit 10 for selectively turning on the ESD protection device 1 duringan ESD event. Although FIG. 1 shows a resistor at the top of the RCtiming circuit 10 and a capacitor at the bottom of the RC timing circuit10, it is understood that this is for exemplary purposes only, and thatthe capacitor may be at the top of the RC timing circuit 10, and theresistor may be at the bottom of the RC timing circuit 10.

An output “A” of the RC timing circuit 10 is sent to a trigger circuit20. As shown in FIG. 1, the trigger circuit 20 includes a plurality ofinverters. Although FIG. 1 only shows 3 inverters, it is understood thatthe trigger circuit 20 may include any number of inverters, such thatthe output of the trigger circuit 20 is the opposite of the output ofthe RC timing circuit 10.

The trigger circuit 20 generates a trigger pulse (not shown) for drivingan ESD clamp. As shown in FIG. 1, the output of the trigger circuit 20is directly connected to a first ESD clamp 30. Although FIG. 1 shows thefirst ESD clamp 30 as a single n-type field-effect transistor (FET), itis understood that this is for clarity and exemplary purposes only, andthat the first ESD clamp 30 may include any number of n-type FETs.

A second ESD clamp 32 is also shown in FIG. 1. Between the first ESDclamp 30 and the second ESD clamp 32 is a selection circuit 50. Theselection circuit 50 is configured to select one of: the trigger circuit20 or a charge pump 40 for controlling the second ESD clamp 32.

The selection circuit 50 includes a pair of transmission gates (notnumbered). A first transmission gate of the selection circuit 50 isdirectly connected to the output of the trigger circuit 20, while thesecond transmission gate of the selection circuit 50 is directlyconnected to the charge pump 50. The charge pump 50, as known in theart, generates a negative voltage bias for driving the secondtransmission gate of the selection circuit 50. Both the firsttransmission gate and the second transmission gate of the selectioncircuit 50 are connected to the second ESD clamp 32.

Each transmission gate includes a p-type FET and a n-type FET connectedtogether. As seen in FIG. 1, the p-type FET of the first transmissiongate (directly connected to the trigger circuit 20) of the selectioncircuit 50 receives the “A” output of the RC timing circuit 10, whilethe n-type FET of the first transmission gate of the selection circuit50 receives the “B” output of the first inverter of the trigger circuit20. The p-type FET of the second transmission gate (directly connectedto the charge pump 40) of the selection circuit 50 receives the “B”output of the first inverter of the trigger circuit 20, while the n-typeFET of the second transmission gate of the selection circuit 50 receivesthe “A” output of the RC timing circuit 10. That is, the firsttransmission gate receives the opposite inputs as the secondtransmission gate, of the selection circuit 50. Therefore, the firsttransmission gate and the second transmission gate are turned “on” asopposite moments.

Under normal conditions, if the output of the RC timing circuit 10 is a“1”, a “1’ is provided to the p-type FET of the first transmission gate(directly connected to the trigger circuit 20, while a “0” is providedto the n-type FET of the first transmission gate. In other words, thefirst transmission gate of the selection circuit 50 is turned “off”during normal conditions.

Once an ESD event occurs, a “0” is received from the RC timing circuit10, which turns on the first transmission gate (directly connected tothe trigger circuit 20), while the second transmission gate of theselection circuit 50 (directly connected of the second ESD clamp 32)turns off. Therefore, the charge pump 40 no longer controls the secondESD clamp 32. The output of the trigger circuit 20 is sent to both thefirst ESD clamp 30 and the second ESD clamp 32. As such, since an ESDevent occurred, any additional electrostatic properties are clamped bythe first ESD clamp 30 and the second ESD clamp 32. However, since thesecond ESD clamp 32 is not turned on until the ESD event occurs, thecurrent leakage from the second ESD clamp 32 does not significantlyaffect the overall current leakage of the ESD protection device 1.

Turning now to FIG. 2, a schematic diagram of an electrostatic dischargeprotection device 2 according to embodiments of the invention is shown.It is understood that the ESD protection device 2 shown in FIG. 2 issubstantially identical to the ESD protection device 1 shown in FIG. 2.However, the “A” input to the transmission gates of the selectioncircuit 50 is no longer from the output of the RC timing circuit 10.Rather, the “A” input to the transmission gates of the selection circuit50 is connected to the output of the second inverter in the triggercircuit 20.

Turning now to FIG. 3, a schematic diagram of an integrated circuit (IC)5 including an electrostatic discharge protection device according toembodiments of the invention is shown. The IC 5 shown in FIG. 3 includesa plurality of I/O devices 7. In between several of these I/O devices 7may include an ESD protection device 1, as shown in FIGS. 1-2. However,each ESD protection device 1 does not require a separate charge pump 40.Rather, a single charge pump 40 may be provided to each ESD protectiondevice 1.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

This written description uses examples to disclose the invention,including the best mode, and also to enable any person skilled in theart to practice the invention, including making and using any devices orsystems and performing any incorporated methods. The patentable scope ofthe invention is defined by the claims, and may include other examplesthat occur to those skilled in the art. Such other examples are intendedto be within the scope of the claims if they have structural elementsthat do not differ from the literal language of the claims, or if theyinclude equivalent structural elements with insubstantial differencesfrom the literal languages of the claims.

1. An electrostatic discharge (ESD) protection device for an integratedcircuit (IC), comprising: a resistor-capacitor (RC) timing circuit forselectively turning on the ESD protection device during an ESD event; atrigger circuit for receiving an output of the RC timing circuit andgenerating a trigger pulse for driving at least one of: a first ESDclamp and a second ESD clamp; and a selection circuit for selecting oneof: the trigger circuit or a charge pump for controlling the second ESDclamp, wherein the charge pump controls the second ESD clamp in anabsence of the ESD event, and wherein the trigger circuit controls thesecond ESD clamp in response to the ESD event; the selection circuitincluding: a first transmission gate for connecting the trigger circuitto the second ESD clamp in response to the ESD event; and a secondtransmission gate for disconnecting the charge pump from the second ESDclamp in response to the ESD event.
 2. The ESD protection device ofclaim 1, wherein the trigger circuit includes a plurality of inverters.3. The ESD protection device of claim 1, wherein the first ESD clampincludes a plurality of n-type field-effect transistors.
 4. The ESDprotection device of claim 1, wherein the second ESD clamp includes aplurality of n-type field-effect transistors.
 5. (canceled)
 6. The ESDprotection device of claim 1, wherein the first transmission gate isconnected to the output of the trigger circuit and the second ESD clamp.7. The ESD protection device of claim 6, wherein the second transmissiongate is connected to the charge pump and the second ESD clamp.
 8. Anintegrated circuit (IC), comprising: a charge pump for supplying anegative bias voltage; and a plurality of electrostatic discharge (ESD)protection devices for the IC, each ESD protection device comprising: aresistor-capacitor (RC) timing circuit for selectively turning on theESD protection device during an ESD event; a trigger circuit forreceiving an output of the RC timing circuit and generating a triggerpulse for driving at least one of: a first ESD clamp and a second ESDclamp; and a selection circuit for selecting one of: the trigger circuitor the charge pump for controlling the second ESD clamp, wherein thecharge pump controls the second ESD clamp in an absence of the ESDevent, and wherein the trigger circuit controls the second ESD clamp inresponse to the ESD event; the selection circuit including: a firsttransmission gate for connecting the trigger circuit to the second ESDclamp in response to the ESD event; and a second transmission gate fordisconnecting the charge pump from the second ESD clamp in response tothe ESD event.
 9. The IC of claim 8, wherein each trigger circuitincludes a plurality of inverters.
 10. The IC of claim 8, wherein thefirst ESD clamp of each ESD protection device includes a plurality ofn-type field-effect transistors.
 11. The IC of claim 8, wherein thesecond ESD clamp of each ESD protection device includes a plurality ofn-type field-effect transistors.
 12. (canceled)
 13. The IC of claim 8,wherein the first transmission gate of each ESD protection device isconnected to the output of the trigger circuit and the second ESD clampof the respective ESD protection device.
 14. The IC of claim 13, whereinthe second transmission gate of each ESD protection device is connectedto the second ESD clamp of the respective ESD protection device and thecharge pump of the IC.
 15. A method of reducing current leakage in anelectrostatic discharge (ESD) protection device for an integratedcircuit (IC), the ESD protection device including a first ESD clampconnected to an RC timing circuit and a trigger circuit, a selectioncircuit for selectively connecting the trigger circuit to a second ESDclamp, and a charge pump, the method comprising: turning off the secondESD clamp in an absence of an ESD event by connecting, by the selectioncircuit, the charge pump to the second ESD clamp; and turning on thesecond ESD clamp in response to the ESD event by disconnecting thecharge pump from the second ESD clamp using the selection circuit andconnecting the trigger circuit to the second ESD clamp using theselection circuit.
 16. The method of claim 15, wherein the selectioncircuit includes two transmission gates.
 17. The method of claim 16,further comprising, in response to the absence of the ESD event and theselection circuit connecting the charge pump to the second ESD clamp,turning off a first transmission gate and turning on a secondtransmission gate connected to the charge pump.
 18. The method of claim17, further comprising, in response to the ESD event, turning on thefirst transmission gate and turning off the second transmission gate.19. The method of claim 18, further comprising, in response to turningon the first transmission gate, turning on the second ESD clamp.
 20. Themethod of claim 19, further comprising dissipating a charge of the ESDevent through the first ESD clamp and the second ESD clamp.